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Si7812DN
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
75
R DS(on) ( Ω )
0.037 at V GS = 10 V
0.046 at V GS = 4.5 V
I D (A)
16 e
16 e
Q g (Typ.)
8 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ?
Package with Small Size and Low 1.07 mm
PowerPAK 1212- 8
Profile
APPLICATIONS
3.30 mm
1
S
S
3.30 mm
? Primary Side Switch
D
2
3
S
G
4
D
8
7
D
D
G
6
5
D
Bottom V ie w
Orderin g Information: Si7 8 12D N -T1-E3 (Lead (P b )-free)
Si7 8 12D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
75
± 20
16 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
16 e
7.2 a, b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
5.7 a, b
25
16 e
3.2 a, b
15
11
A
mJ
T C = 25 °C
52
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
33
3.8 a, b
W
T A = 70 °C
2.4 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73332
S-83050-Rev. D, 29-Dec-08
www.vishay.com
1
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